نتایج جستجو برای: ترانزیستور FGMOS

تعداد نتایج: 496  

2007
Jon Alfredsson Snorre Aunet

To reduce power consumption in electronic designs, new techniques for circuit design must always be considered. Floating-gate MOS (FGMOS) is one of those techniques and has previously shown potentially better performance than standard static CMOS circuits for ultra-low power designs. One reason for this is because FGMOS only requires a few transistors per gate and still retain a large fan-in. A...

2016
Roshani Gupta Rockey Gupta Susheel Sharma

This paper presents the application of floating-gate MOSFET (FGMOS) in the design of low voltage and high speed digital circuits wherein threshold voltage tunability of FGMOS has been exploited to enhance the performance of inverter in terms of various parameters like switching threshold voltage, noise margins, propagation delay and energy delay product. It has been observed that by varying the...

2014
Richa SRIVASTAVA Maneesha GUPTA Urvashi SINGH

This paper presents a four-quadrant multiplier based on square-law characteristic of floating gate MOSFET (FGMOS) in saturation region. The proposed circuit uses square-difference identity and the differential voltage squarer proposed by Gupta et al. to implement the multiplication function. The proposed multiplier employs eight FGMOS transistors and two resistors only. The FGMOS implementation...

در این مقاله، یک تقویت کننده ترارسانایی عملیاتی (OTA) ولتاژ پایین و توان پایین با استفاده از ترانزیستور FGMOS پیشنهاد شده است. در OTA پیشنهادی در تکنولوژی TSMC 0.18 µm CMOS با ولتاژ تغذیه یک ولت و توان مصرفی ماکزیمم 40 µW، محدوده تنظیم نسبی 50 برابر به دست می‌آید. نتایج شبیه‌سازی تقویت‌کننده پیشنهادی، بهره حلقه باز 30.2 dB و فرکانس بهره واحد 942 MHz را نشان می‌دهند. در مقایسه با کارهای قبلی، تق...

در این مقاله، یک تقویت کننده ترارسانایی عملیاتی (OTA) ولتاژ پایین و توان پایین با استفاده از ترانزیستور FGMOS پیشنهاد شده است. در OTA پیشنهادی در تکنولوژی TSMC 0.18 µm CMOS با ولتاژ تغذیه یک ولت و توان مصرفی ماکزیمم 40 µW، محدوده تنظیم نسبی 50 برابر به دست می‌آید. نتایج شبیه‌سازی تقویت‌کننده پیشنهادی، بهره حلقه باز 30.2 dB و فرکانس بهره واحد 942 MHz را نشان می‌دهند. در مقایسه با کارهای قبلی، تق...

2010
Susheel Sharma S S Rajput L K Mangotra S S Jamuar

This paper aims at to develop floating gate MOSFET (FGMOS) based low voltage, voltage-mode and current-mode circuits operating at ± 0.75 V supply voltages. The utility of FGMOS for low voltage applications lies in its threshold voltage tunability. FGMOS based low voltage current mirror and its subsequent use in the development of second-generation current conveyor is presented which in turn has...

2013
K. S. Rangasamy

A novel 4-quadrant analog multiplier using Floating Gate MOS (FGMOS) transistors operating in saturation region are implemented. Floating gate MOSFETs are being utilized in a number of new and existing analog applications. These devices are not only useful for designing memory elements but also we can implement circuit elements. The main advantage in FGMOS is that the drain current is proportio...

2011
Sinem KELEŞ Hulusi Hakan KUNTMAN

A novel four-quadrant analog multiplier using floating gate MOS (FGMOS) transistors operating in the saturation region is presented. The drain current is proportional to the square of the weighted sum of the input signals. This square law characteristic of the FGMOS transistor is used to implement the quarter square identity by utilizing only six FGMOS transistors. The main features of this rem...

2010
Rishikesh PANDEY Maneesha GUPTA

This paper proposes a new floating gate MOSFET (FGMOS) based voltage-controlled grounded resistor. In the proposed circuit FGMOS operating in the ohmic region is linearized by another conventional MOSFET operating in the saturation region. The major advantages of FGMOS based voltage-controlled grounded resistor (FGVCGR) are simplicity, low total harmonic distortion (THD), and low power consumpt...

2013
Abhinav Anand Sushanta K. Mandal Anindita Dash Shivalal Patro

Floating Gate MOS (FGMOS) transistors can be very well implemented in lieu of conventional MOSFET for design of a low-voltage, low-power current mirror. Incredible features of flexibility, controllability and tunability of FGMOS yields better results with respect to power, supply voltage and output swing. This paper presents a new current mirror designed with FGMOS which exhibit high output imp...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید